Resistive Switching Memory Architecture Based on Polarity Controllable Selectors - Université de Bourgogne Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nanotechnology Année : 2019

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Dates et versions

hal-02060199 , version 1 (07-03-2019)

Identifiants

Citer

Alexandre Levisse, Pierre-Emmanuel Gaillardon, Bastien Giraud, Ian O'Connor, Jean-Philippe Noel, et al.. Resistive Switching Memory Architecture Based on Polarity Controllable Selectors. IEEE Transactions on Nanotechnology, 2019, 18, pp.183-194. ⟨10.1109/TNANO.2018.2887140⟩. ⟨hal-02060199⟩
97 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More