Recrystallisation of thin 4H-SiC films deposed by PVD
Recristallisation de films minces de 4H-SiC réalisés par dépôts PVD
Résumé
SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. High-temperature annealing with two plateaus at 1400°C and 1700°C is performed to recrystallize the layers. The crystallinity was investigated by Raman spectroscopy with laser lines of 785, 405, and 325nm. To determine the electrical conductivity of the layers, electrical measurements are made. Only the electron beam evaporated layers present a recrystallization close to homoepitaxial quality but, contrary to sputtered layers, they don’t have an electrical conductivity.
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