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Poster De Conférence Année : 2022

Recrystallisation of thin 4H-SiC films deposed by PVD

Recristallisation de films minces de 4H-SiC réalisés par dépôts PVD

Résumé

SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. High-temperature annealing with two plateaus at 1400°C and 1700°C is performed to recrystallize the layers. The crystallinity was investigated by Raman spectroscopy with laser lines of 785, 405, and 325nm. To determine the electrical conductivity of the layers, electrical measurements are made. Only the electron beam evaporated layers present a recrystallization close to homoepitaxial quality but, contrary to sputtered layers, they don’t have an electrical conductivity.
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Dates et versions

hal-04171214 , version 1 (26-07-2023)

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  • HAL Id : hal-04171214 , version 1

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Elise Usureau, Enora Marion Vuillermet, Mihai Lazar, Aurore Andrieux, Alexandre Jacquemot. Recrystallisation of thin 4H-SiC films deposed by PVD. 19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. . ⟨hal-04171214⟩
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